76 research outputs found

    A Free Energy Model of Boron Carbide

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    The assessed phase diagram of the boron-carbon system contains a single non-stoichiometric boron-carbide phase of rhombohedral symmetry with a broad, thermodynamically improbable, low temperature composition range. We combine first principles total energy calculations with phenomenological thermodynamic modeling to propose a revised low temperature phase diagram that contains two boron-carbide phases of differing symmetries and compositions. One structure has composition B4C and consists of B11C icosahedra and C-B-C chains, with the placement of carbon on the icosahedron breaking rhombohedral symmetry. This phase is destabilized above 600K by the configurational entropy of alternate carbon substitutions. The other structure, of ideal composition B13C2, has a broad composition range at high temperature, with rhombohedral symmetry throughout, as observed experimentally.Comment: 15 pages, 3 figures, submitted to J. Stat. Phys. August 9th, 201

    ELSI: A Unified Software Interface for Kohn-Sham Electronic Structure Solvers

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    Solving the electronic structure from a generalized or standard eigenproblem is often the bottleneck in large scale calculations based on Kohn-Sham density-functional theory. This problem must be addressed by essentially all current electronic structure codes, based on similar matrix expressions, and by high-performance computation. We here present a unified software interface, ELSI, to access different strategies that address the Kohn-Sham eigenvalue problem. Currently supported algorithms include the dense generalized eigensolver library ELPA, the orbital minimization method implemented in libOMM, and the pole expansion and selected inversion (PEXSI) approach with lower computational complexity for semilocal density functionals. The ELSI interface aims to simplify the implementation and optimal use of the different strategies, by offering (a) a unified software framework designed for the electronic structure solvers in Kohn-Sham density-functional theory; (b) reasonable default parameters for a chosen solver; (c) automatic conversion between input and internal working matrix formats, and in the future (d) recommendation of the optimal solver depending on the specific problem. Comparative benchmarks are shown for system sizes up to 11,520 atoms (172,800 basis functions) on distributed memory supercomputing architectures.Comment: 55 pages, 14 figures, 2 table

    ELSI -- An open infrastructure for electronic structure solvers

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    Routine applications of electronic structure theory to molecules and periodic systems need to compute the electron density from given Hamiltonian and, in case of non-orthogonal basis sets, overlap matrices. System sizes can range from few to thousands or, in some examples, millions of atoms. Different discretization schemes (basis sets) and different system geometries (finite non-periodic vs. infinite periodic boundary conditions) yield matrices with different structures. The ELectronic Structure Infrastructure (ELSI) project provides an open-source software interface to facilitate the implementation and optimal use of high-performance solver libraries covering cubic scaling eigensolvers, linear scaling density-matrix-based algorithms, and other reduced scaling methods in between. In this paper, we present recent improvements and developments inside ELSI, mainly covering (1) new solvers connected to the interface, (2) matrix layout and communication adapted for parallel calculations of periodic and/or spin-polarized systems, (3) routines for density matrix extrapolation in geometry optimization and molecular dynamics calculations, and (4) general utilities such as parallel matrix I/O and JSON output. The ELSI interface has been integrated into four electronic structure code projects (DFTB+, DGDFT, FHI-aims, SIESTA), allowing us to rigorously benchmark the performance of the solvers on an equal footing. Based on results of a systematic set of large-scale benchmarks performed with Kohn–Sham density-functional theory and density-functional tight-binding theory, we identify factors that strongly affect the efficiency of the solvers, and propose a decision layer that assists with the solver selection process. Finally, we describe a reverse communication interface encoding matrix-free iterative solver strategies that are amenable, e.g., for use with planewave basis sets. Program summary: Program title: ELSI Interface CPC Library link to program files: http://dx.doi.org/10.17632/473mbbznrs.1 Licensing provisions: BSD 3-clause Programming language: Fortran 2003, with interface to C/C++ External routines/libraries: BLACS, BLAS, BSEPACK (optional), EigenExa (optional), ELPA, FortJSON, LAPACK, libOMM, MPI, MAGMA (optional), MUMPS (optional), NTPoly, ParMETIS (optional), PETSc (optional), PEXSI, PT-SCOTCH (optional), ScaLAPACK, SLEPc (optional), SuperLU_DIST Nature of problem: Solving the electronic structure from given Hamiltonian and overlap matrices in electronic structure calculations. Solution method: ELSI provides a unified software interface to facilitate the use of various electronic structure solvers including cubic scaling dense eigensolvers, linear scaling density matrix methods, and other approaches

    SARS-CoV-2 B.1.617.2 Delta variant replication and immune evasion

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    Abstract: The B.1.617.2 (Delta) variant of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) was first identified in the state of Maharashtra in late 2020 and spread throughout India, outcompeting pre-existing lineages including B.1.617.1 (Kappa) and B.1.1.7 (Alpha)1. In vitro, B.1.617.2 is sixfold less sensitive to serum neutralizing antibodies from recovered individuals, and eightfold less sensitive to vaccine-elicited antibodies, compared with wild-type Wuhan-1 bearing D614G. Serum neutralizing titres against B.1.617.2 were lower in ChAdOx1 vaccinees than in BNT162b2 vaccinees. B.1.617.2 spike pseudotyped viruses exhibited compromised sensitivity to monoclonal antibodies to the receptor-binding domain and the amino-terminal domain. B.1.617.2 demonstrated higher replication efficiency than B.1.1.7 in both airway organoid and human airway epithelial systems, associated with B.1.617.2 spike being in a predominantly cleaved state compared with B.1.1.7 spike. The B.1.617.2 spike protein was able to mediate highly efficient syncytium formation that was less sensitive to inhibition by neutralizing antibody, compared with that of wild-type spike. We also observed that B.1.617.2 had higher replication and spike-mediated entry than B.1.617.1, potentially explaining the B.1.617.2 dominance. In an analysis of more than 130 SARS-CoV-2-infected health care workers across three centres in India during a period of mixed lineage circulation, we observed reduced ChAdOx1 vaccine effectiveness against B.1.617.2 relative to non-B.1.617.2, with the caveat of possible residual confounding. Compromised vaccine efficacy against the highly fit and immune-evasive B.1.617.2 Delta variant warrants continued infection control measures in the post-vaccination era

    BaCu<sub>2</sub>Sn(S,Se)<sub>4</sub>: Earth-Abundant Chalcogenides for Thin-Film Photovoltaics

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    Chalcogenides such as CdTe, Cu­(In,Ga)­(S,Se)<sub>2</sub> (CIGSSe), and Cu<sub>2</sub>ZnSn­(S,Se)<sub>4</sub> (CZTSSe) have enabled remarkable advances in thin-film photovoltaic performance, but concerns remain regarding (i) the toxicity (CdTe) and (ii) scarcity (CIGSSe/CdTe) of the constituent elements and (iii) the unavoidable antisite disordering that limits further efficiency improvement (CZTSSe). In this work, we show that a different materials class, the BaCu<sub>2</sub>SnSe<sub><i>x</i></sub>S<sub>4–<i>x</i></sub> (BCTSSe) system, offers a prospective path to circumvent difficulties (i–iii) and to target new environmentally friendly and earth-abundant absorbers. Antisite disordering and associated band tailing are discouraged in BCTSSe due to the distinct coordination environment of the large Ba<sup>2+</sup> cation. Indeed, an abrupt absorption edge and sharp associated photoluminescence emission demonstrate a reduced impact of band tailing in BCTSSe relative to CZTSSe. Our combined experimental and computational studies of BCTSSe reveal that the compositions 0 ≤ <i>x</i> ≤ 4 exhibit a tunable nearly direct or direct bandgap in the 1.6–2 eV range, spanning relevant values for single- or multiple-junction photovoltaic applications. For the first time, a prototype BaCu<sub>2</sub>SnS<sub>4</sub>-based thin-film solar cell has been successfully demonstrated, yielding a power conversion efficiency of 1.6% (0.42 cm<sup>2</sup> total area). The systematic experimental and theoretical investigations, combined with proof-of-principle device results, suggest promise for BaCu<sub>2</sub>SnSe<sub><i>x</i></sub>S<sub>4–<i>x</i></sub> as a thin-film solar cell absorber

    I<sub>2</sub>–II–IV–VI<sub>4</sub> (I = Cu, Ag; II = Sr, Ba; IV = Ge, Sn; VI = S, Se): Chalcogenides for Thin-Film Photovoltaics

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    Recent work has identified a non-zinc-blende-type quaternary semiconductor, Cu<sub>2</sub>BaSnS<sub>4–<i>x</i></sub>Se<sub><i>x</i></sub> (CBTSSe), as a promising candidate for thin-film photovoltaics (PVs). CBTSSe circumvents difficulties of competing PV materials regarding (i) toxicity (e.g., CdTe), (ii) scarcity of constituent elements (e.g., Cu­(In,Ga)­(S,Se)<sub>2</sub>/CdTe), and (iii) unavoidable antisite disordering that limits further efficiency improvement (e.g., in Cu<sub>2</sub>ZnSnS<sub>4–<i>x</i></sub>Se<sub><i>x</i></sub>). In this work, we build on the CBTSSe paradigm by computationally scanning for further improved, earth-abundant and environmentally friendly thin-film PV materials among the 16 quaternary systems I<sub>2</sub>–II–IV–VI<sub>4</sub> (I = Cu, Ag; II = Sr, Ba; IV = Ge, Sn; VI = S, Se). The band structures, band gaps, and optical absorption properties are predicted by hybrid density-functional theory calculations. We find that the Ag-containing compounds (which belong to space groups <i>I</i>222 or <i>I</i>4̅2<i>m</i>) show indirect band gaps. In contrast, the Cu-containing compounds (which belong to space group <i>P</i>3<sub>1</sub>/<i>P</i>3<sub>2</sub> and <i>Ama</i>2) show direct or nearly direct band gaps. In addition to the previously considered Cu<sub>2</sub>BaSnS<sub>4–<i>x</i></sub>Se<sub><i>x</i></sub> system, two compounds not yet considered for PV applications, Cu<sub>2</sub>BaGeSe<sub>4</sub> (<i>P</i>3<sub>1</sub>) and Cu<sub>2</sub>SrSnSe<sub>4</sub> (<i>Ama</i>2), show predicted quasi-direct/direct band gaps of 1.60 and 1.46 eV, respectively, and are therefore most promising with respect to thin-film PV application (both single- and multijunction). A Cu<sub>2</sub>BaGeSe<sub>4</sub> sample, prepared by solid-state reaction, exhibits the expected <i>P</i>3<sub>1</sub> structure type. Diffuse reflectance and photoluminescence spectrometry measurements yield an experimental band gap of 1.91(5) eV for Cu<sub>2</sub>BaGeSe<sub>4</sub>, a value slightly smaller than that for Cu<sub>2</sub>BaSnS<sub>4</sub>
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